mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw4ic2230 wideband integrated circuit is designed for w - cdma base station applications. it uses freescale?s newest high voltage (26 to 28 volts) ldmos ic technology and integrates a multi - stage structure. its wideband on - chip design makes it usable from 1600 to 2400 mhz. the linearity performances cover all modulations fo r cellular applications: gsm, gsm edge, tdma, cdma and w - cdma. final application ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq1 = 60 ma, i dq2 = 350 ma, p out = 5 watts avg., f = 2140 mhz, channel bandwidth = 3.84 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain ? 31 db drain efficiency ? 15% acpr @ 5 mhz = - 45 dbc @ 3.84 mhz bandwidth driver application ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq1 = 60 ma, i dq2 = 350 ma, p out = 0.4 watts avg., f = 2140 mhz, channel bandwidth = 3.84 mhz, peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain ? 31.5 db acpr @ 5 mhz = - 53.5 dbc @ 3.84 mhz bandwidth ? capable of handling 3:1 vswr, @ 28 vdc, 2170 mhz, 5 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? on - chip matching (50 ohm input, dc blocked, >5 ohm output) ? integrated quiescent current temperature compensation with enable/disable function ? on - chip current mirror g m reference fet for self biasing application (1) ? integrated esd protection ? n suffix indicates lead - free terminations ? 200 c capable plastic package ? also available in gull wing for surface mount ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel figure 1. functional block diagram figure 2. pin connections (top view) gnd v ds1 rf in v gs1 gnd v ds2 v ds3/ rf out gnd v gs2 v gs3 gnd quiescent current temperature compensation 3 stages i c v gs1 rf in v ds2 v ds1 v gs2 v gs3 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 v ds3 /rf out 1 note: exposed backside flag is source terminal for transistors. v rd1 v rg1 v rd1 v rg1 1. refer to an1987/d, quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf . select documentation/application notes - an1987. mw4ic2230 rev. 3, 1/2005 freescale semiconductor technical data 2110 - 2170 mhz, 30 w, 28 v single w - cdma rf ldmos wideband integrated power amplifiers case 1329 - 09 to - 272 wb - 16 plastic mw4ic2230nbr1(mbr1) mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 case 1329a - 03 to - 272 wb - 16 gull plastic mw4ic2230gnbr1(gmbr1) ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +8 vdc storage temperature range t stg - 65 to +175 c operating channel temperature t j 200 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case stage 1 stage 2 stage 3 r jc 10.5 5.1 2.3 c/w table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c5 (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma, p out = 0.4 w avg., f = 2110 mhz, f = 2170 mhz, single - carrier w - cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. peak/avg. ratio = 8.5 db @ 0.01% probability on ccdf. power gain g ps 29 31.5 ? db input return loss irl ? -25 -10 db adjacent channel power ratio p out = 0.4 w avg. p out = 1.26 w avg. acpr ? ? - 53.5 -52 -50 ? dbc stability (10 mw - 60 dbc typical performances (in freescale test fixture tuned for 0.4 w avg. w - cdma driver) v dd = 28 vdc, i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma, 2110 mhz mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale reference application circuit tuned for 2 - carrier w - cdma signal) v dd = 28 vdc, p out = 0.4 w avg., i dq1 = 60 ma, i dq2 = 400 ma, i dq3 = 245 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz channel bandwidth @ 10 mhz offset. peak/avg. = 8.5 db @ 0.01% probability on ccdf. power gain g ps ? 31.5 ? db intermodulation distortion im3 ? -52 ? dbc adjacent channel power ratio acpr ? -55 ? dbc input return loss irl ? -26 ? db note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed.
4 rf device data freescale semiconductor mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 z6 1.120 x 0.090 microstrip z7 0.340 x 0.090 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 figure 3. mw4ic2230nbr1(mbr1)/gnbr1(gmbr1) test circuit schematic z1 2.180 x 0.090 microstrip z2, z3 0.040 x 0.430 microstrip z4 0.350 x 0.240 microstrip z5 0.420 x 0.090 microstrip c6 c1 r1 r2 z1 rf input v d1 v g1 v g2 z4 z5 z7 rf output c12 c7 c3 + v d3 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc nc nc z6 dut c9 c10 c11 + r3 v g3 c5 c2 v d2 + z2 c8 c4 + z3 quiescent current temperature compensation table 6. mw4ic2230nbr1(mbr1)/gnbr1(gmbr1) test circuit component designations and values part description part number manufacturer c1, c2, c3, c4 10 f, 35 v tantalum capacitors tajd106k035 avx c5, c6, c7, c8, c12 8.2 pf 100b chip capacitors 100b8r2cw atc c9, c10 1.8 pf 100b chip capacitors 100b1r8bw atc c11 0.3 pf 100b chip capacitor 100b0r3bw atc r1, r2, r3 1.8 k chip resistors (1206)
mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 5 rf device data freescale semiconductor figure 4. mw4ic2230nbr1(mbr1)/gnbr1(gmbr1) test circuit component layout r1 v g1 c6 v g2 v d1 v g3 v d2 gnd c2 c1 r2 r3 c4 rev 1 mw4ic2230 v d3 c7 c5 c8 c9 c10 c11 c12 c3 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
6 rf device data freescale semiconductor mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 typical characteristics 2200 26 32 2050 ?60 0 irl g ps acpr f, frequency (mhz) figure 5. single - carrier w - cdma wideband performance @ p out = 26 dbm g ps , power gain (db) acpr, adjacent channel power ratio (dbc) input return loss (db) irl, v dd = 28 vdc p out = 26 dbm (avg.) i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma 1?carrier w?cdma 31 ?10 30 ?20 29 ?30 28 ?40 27 ?50 2150 2100 2200 26 32 2050 ?60 0 31 ?10 30 ?20 29 ?30 28 ?40 27 ?50 2150 2100 f, frequency (mhz) figure 6. single - carrier w - cdma wideband performance @ p out = 31 dbm g ps , power gain (db) acpr, adjacent channel power ratio (dbc) input return loss (db) irl, irl g ps acpr v dd = 28 vdc p out = 31 dbm (avg.) i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma 1?carrier w?cdma 10 ?60 ?40 0.1 t c = 85 c p out , output power (watts) avg. figure 7. adjacent channel power ratio versus output power acpr, adjacent channel power ratio (dbc) v dd = 28 vdc i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma f = 2140 mhz, 1?carrier w?cdma 1 ?45 ?50 ?55 25 c ?30 c 2200 27 33 2050 ?60 0 32 ?10 31 ?20 30 ?30 29 ?40 28 ?50 2150 2100 f, frequency (mhz) figure 8. 2 - carrier w - cdma wideband performance g ps , power gain (db) acpr, adjacent channel power ratio (dbc) input return loss (db) irl, irl g ps acpr v dd = 28 vdc p out = 26 dbm (avg.) i dq1 = 60 ma, i dq2 = 400 ma, i dq3 = 245 ma 2?carrier w?cdma im3 im3, intermodulation distortion (dbc)
mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 7 rf device data freescale semiconductor typical characteristics 24 33 50 2 actual p1db = 45.3 dbm (34 w) ideal p in , input power (dbm) figure 9. output power versus input power p out , output power (dbm) v dd = 28 vdc i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma, f = 2140 mhz pulsed cw, frequency 1 khz, duty cycle 10% p3db = 46.3 dbm (43 w) 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 6 4 8 10 12 14 16 18 20 22 2300 1.50 2.00 1950 f, frequency (mhz) figure 10. delay versus frequency delay (ns) v dd = 28 vdc, small signal i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma 1.95 1.90 1.80 1.75 1.70 1.65 1.60 1.55 2000 2050 2100 2150 2200 2250 190 1.e+09 90 100 110 120 130 140 150 160 170 180 1.e+08 1.e+05 1.e+04 t j , junction temperature ( c) figure 11. mttf factor versus temperature junction mttf factor (hours x amps ) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 2 3rd stage 2nd stage 1st stage 1.e+07 1.e+06 1.85
8 rf device data freescale semiconductor mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 v dd = 28 v, i dq1 = 60 ma, i dq2 = 350 ma, i dq3 = 265 ma, p out = 26 dbm figure 12. series equivalent input and load impedance z o = 50 ? f = 2050 mhz f = 2230 mhz f mhz z in ? 2050 2110 2140 42.18 + j1.49 41.06 - j1.30 40.49 - j2.42 z load * z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. 2170 2230 40.05 - j3.45 39.29 - j6.31 z in z load device under test output matching network z load ? 8.52 - j0.46 8.58 - j0.20 8.63 - j0.09 8.69 - j0.01 8.81 + j0.04 f = 2050 mhz f = 2230 mhz z in *
mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 package dimensions to - 272 wb - 16 mw4ic2230nbr1(mbr1) plastic .224 bsc case 1329 - 09 issue j notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions "d" and "e1" do not include mold protrusion. allowable protrusion is .006 (0.15) per side. dimensions "d" and "e1" do include mold mismatch and are determined at datum plane ?h?. 5. dimensions "b", "b1", "b2" and "b3" do not include dambar protrusion. allowable dambar protrusion shall be .005 (0.13) total in excess of the "b", "b1", "b2" and "b3" dimensions at maximum material condition. 6. hatching represents the exposed area of the heat slug. 7. dim a2 applies within zone "j" only. c h a seating plane datum plane y y dim a min max min max millimeters .100 .104 2.54 2.64 inches m .600 ??? 15.24 ??? n .270 ??? 6.86 ??? d .928 .932 23.57 23.67 d1 e .551 .559 14.00 14.20 e1 .353 .357 8.97 9.07 b .011 .017 0.28 0.43 b1 .037 .043 0.94 1.09 b2 .037 .043 0.94 1.09 c1 .007 .011 .18 .28 e r1 .063 .068 1.6 1.73 aaa .054 bsc .004 1.37 bsc .10 e1 .040 bsc 1.02 bsc e2 5.69 bsc b3 .225 .231 5.72 5.87 c1 b b3 a e1 r1 e d 4x b1 d1 e 10x b pin one index 6x e1 4x e2 b2 m aaa ca m aaa ca m aaa ca m aaa ca m aaa ca ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? m n view y - y .150 bsc e3 3.81 bsc 2x e3 a1 a1 .038 .044 0.96 1.12 .810 bsc 20.57 bsc note 6 2x b zone "j" a2 7 f .025 bsc 0.64 bsc f e1 e2 .346 .350 8.79 8.89 a2 .040 .042 1.02 1.07 e2
mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 11 rf device data freescale semiconductor to - 272 wb - 16 gull plastic mw4ic2230gnbr1(gmbr1) .224 bsc case 1329a - 03 issue b notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions "d" and "e1" do not include mold protrusion. allowable protrusion is .006 (0.15) per side. dimensions "d" and "e1" do include mold mismatch and are determined at datum plane ?h?. 5. dimensions "b", "b1", "b2" and "b3" do not include dambar protrusion. allowable dambar protrusion shall be .005 (0.13) total in excess of the "b", "b1", "b2" and "b3" dimensions at maximum material condition. 6. hatching represents the exposed area of the heat sink. datum plane y y dim a min max min max millimeters .100 .104 2.54 2.64 inches m .600 ??? 15.24 ??? n .270 ??? 6.86 ??? d .928 .932 23.57 23.67 d1 e .429 .437 10.90 11.10 e1 .353 .357 8.97 9.07 b .011 .017 0.28 0.43 b1 .037 .043 0.94 1.09 b2 .037 .043 0.94 1.09 c1 .007 .011 .18 .28 e r1 .063 .068 1.6 1.73 aaa .054 bsc .004 1.37 bsc .10 e1 .040 bsc 1.02 bsc e2 5.69 bsc b3 .225 .231 5.72 5.87 b b3 a e1 e d 4x b1 d1 e 10x b pin one index 6x e1 4x e2 b2 m aaa ca m aaa ca m aaa ca m aaa ca m aaa ca m n view y - y .150 bsc e3 3.81 bsc 2x e3 a1 .001 .004 0.02 0.10 l1 l a1 gage plane t detail y t 2 8 2 8 l .018 .024 4.90 5.06 l1 a2 .099 .110 2.51 2.79 .01 bsc 0.25 bsc a2 c h c1 a detail y seating plane .810 bsc 20.57 bsc note 6 2x r1 b e2 e2 e2 .346 .350 8.79 8.89
12 rf device data freescale semiconductor mw4ic2230nbr1 mw4ic2230gnbr1 MW4IC2230MBR1 mw4ic2230gmbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com mw4ic2230 rev. 3, 1/2005 document number:
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